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| 貨號 | 品名 | 規(guī)格 | 包裝 | 單價(jià) | 貨期 | 庫存 |
| JD200601115920 | SnS2 二硫化錫 | 超 高純 | 1g | 2000元 | 咨詢客服 | 3天 |
| JD200601115908 | SnS2 二硫化錫 貨 | 高純 | 1g | 1000元 | 咨詢客服 | 3天 |
| 性狀： | 晶體大?。?5~10 mm 晶體種類： Semiconductor，拓?fù)洳牧?BR>純度： >99.999 % 表征方法： EDS，SEM，Raman 禁帶寬度： 1.44eV 注意事項(xiàng)： 晶體穩(wěn)定，不需要特殊保存 |
| 質(zhì)量標(biāo)準(zhǔn)： | 參考文獻(xiàn) 1， Liu, Yuhan, et al. "Confining SnS2 ultrathin nanosheets in hollow carbon nanostructures for efficient capacitive sodium storage." Joule 2.4 (2018): 725-735. 2， Zhou, Xing, et al. "Tunneling diode based on WSe2/SnS2 heterostructure incorporating high detectivity and responsivity." Advanced Materials 30.7 (2018): 1703286. 3，Meng, Linxing, et al. "Doping‐Induced Amorphization, Vacancy, and Gradient Energy Band in SnS2 Nanosheet Arrays for Improved Photoelectrochemical Water Splitting." Angewandte Chemie International Edition 58.20 (2019): 6761-6765. 4，Shi, Xiao, et al. "Metallic‐State SnS2 Nanosheets with Expanded Lattice Spacing for High‐Performance Sodium‐Ion Batteries." ChemSusChem 12.17 (2019): 4046-4053. |
