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貨號(hào) | 品名 | 規(guī)格 | 包裝 | 單價(jià) | 貨期 | 庫(kù)存 |
JD200601113258 | HfSe2 硒化鉿 | 超高純 | 1g | 2000元 | 咨詢客服 | 3天 |
JD200601113235 | HfSe2 硒化鉿 | 高純 | 1g | 1000元 | 咨詢客服 | 3天 |
性狀: | 晶體種類: 半導(dǎo)體,拓?fù)洳牧希t外半導(dǎo)體材料, 純度: 5N , 6N 禁帶寬度: 0.55eV 生長(zhǎng)方式: CVT 化學(xué)氣相傳輸法 更多信息: 請(qǐng)咨詢:sales@6carbon.com |
質(zhì)量標(biāo)準(zhǔn): | 參考文獻(xiàn): 1,Mirabelli, Gioele, et al. "Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2." Journal of Applied Physics 120.12 (2016): 125102. 2,Mleczko, Michal J., et al. "HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides." Science advances 3.8 (2017): e1700481. 3,Yin, Lei, et al. "Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2." Applied Physics Letters 109.21 (2016): 213105. |