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| 貨號(hào) | 品名 | 規(guī)格 | 包裝 | 單價(jià) | 貨期 | 庫(kù)存 |
| JD200601113116 | HfS2 硫化鉿 | -- | -- | 0元 | 咨詢(xún)客服 | 3天 |
| 性狀： | 晶體種類(lèi)： Semiconductor 純度： >99.999 % 表征方法： EDS，SEM，Raman 晶體生長(zhǎng)方式： CVT 化學(xué)氣相傳輸法 |
| 質(zhì)量標(biāo)準(zhǔn)： | 1,Kanazawa, Toru, et al. "Few-layer HfS 2 transistors." Scientific reports 6 (2016): 22277. 2,Fu, Lei, et al. "Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near‐Infrared Phototransistors." Advanced Materials 29.32 (2017): 1700439. 3,Mirabelli, Gioele, et al. "Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2." Journal of Applied Physics 120.12 (2016): 125102. 4,Colibaba, Stefana Anais, et al. "Interlayer dielectric function of a type-II van der Waals semiconductor: The HfS 2/PtS 2 heterobilayer." Physical Review Materials 3.12 (2019): 124002. |
