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| 性狀： | 材料名稱 Name GeBi4Te7 性質(zhì)分類 Electrical properties 拓撲絕緣體,紅外材料，熱電材料，相變材料 Topological Insulators 禁帶寬度 Bangap 0.597 eV 合成方法 Synthetic method CVT 晶體結(jié)構(gòu) Crystal Structure trigonal 剝離難易程度 Degree of difficulty for exfoliation 易 Easy |
| 質(zhì)量標準： | 參考文獻 1，Kuznetsov, V. L., L. A. Kuznetsova, and D. M. Rowe. "Effect of nonstoichiometry on the thermoelectric properties of GeBi 4 Te 7." Journal of applied physics 85.6 (1999): 3207-3210. 2，Imai, Yoji, and Akio Watanabe. "Electronic structures of PbBi4Te7 and GeBi4Te7 calculated by a first-principle pseudopotential method." Intermetallics 11.5 (2003): 451-458. 3，Souchay, Daniel, et al. "Layered manganese bismuth tellurides with GeBi 4 Te 7-and GeBi 6 Te 10-type structures: towards multifunctional materials." Journal of Materials Chemistry C 7.32 (2019): 9939-9953. 4， Shelimova, L. E., and M. A. Kretova. "Phase transformations in Ge 3 Bi 2 Te 6, GeBi 2 Te 4 and GeBi 4 Te 7 semiconductor compounds." Izvestiya Akademii Nauk-Rossijskaya Akademiya Nauk. Neorganicheskie Materialy 29.1 (1993): 54-58. |
