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貨號(hào) | 品名 | 規(guī)格 | 包裝 | 單價(jià) | 貨期 | 庫(kù)存 |
JD200528091514 | AgInP2S6晶體 | 大于20平方毫米 | 5120元 | 咨詢(xún)客服 | 3天 | |
JD200528091438 | AgInP2S6晶體 | 大于10平方毫米 | -- | 3120元 | 咨詢(xún)客服 | 3天 |
性狀: | 材料名稱(chēng) Name AgInP2S6 性質(zhì)分類(lèi) Electrical properties
Semiconductor,Nonlinear Material,F(xiàn)erroelectrics Material 禁帶寬度 Bangap 1.147 eV 合成方法 Synthetic method CVT 剝離難易程度 Degree of difficulty for exfoliation
Easy |
質(zhì)量標(biāo)準(zhǔn): | 材料性質(zhì)參考文獻(xiàn): 1, https://doi.org/10.1039/C7RA13519J Structural, electronic, vibration and elasticproperties of the layered AgInP2S6 semiconductingcrystal – DFT approach 2, https://aip.scitation.org/doi/10.1063/1.4962956 Second-harmonic generation in quaternary atomically thin layered AgInP2S6 crystals |